A. Salokatve: search on Z-Library

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1

disordered alloy

Arola, E., Rao, R. S., Salokatve, A., Bansil, A.

Journal:

Physical Review B

Year:

1990

Language:

english

File:

PDF, 794 KB

english, 1990

2

MBE growth of monolithic MgZnSSe/ZnSSe/CdZnSe microcavity led structures

P. Uusimaa, A. Rinta-Möykky, S. Orsila, A. Salokatve, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 362 KB

english, 1998

3

Monolithic super-bright red resonant cavity light-emitting diode grown by solid source molecular beam epitaxy

Jalonen, M., Kongas, J., Toivonen, M., Savolainen, P., Salokatve, A., Pessa, M.

Journal:

IEEE Photonics Technology Letters

Year:

1998

Language:

english

File:

PDF, 59 KB

english, 1998

4

[IEEE Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference - Nara, Japan (4-8 Oct. 1998)] Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) - Tensile-strained single quantum well 808 nm lasers with Al-free active regions and InGaAlP cladding layers grown by solid source MBE

Nabiev, R.F., Aarik, J., Asonen, H., Bournes, P., Corvini, P., Fang, F., Finander, M., Jansen, M., Nappi, J., Rakennus, K., Salokatve, A.

Year:

1998

Language:

english

File:

PDF, 152 KB

english, 1998

5

Unipolar avalanche multiplication phenomenon in multiquantum well structures

Toivonen, M., Jalonen, M., Salokatve, A., Pessa, M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 603 KB

english, 1993

6

The photoluminescence spectra of thin Si-doped GaAs layers grown by MBE

J. Pastrňák, J. Oswald, M. Láznička, A. Bosacchi, A. Salokatve

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 563 KB

english, 1990

7

[IEEE 51st Annual Device Research Conference - Santa Barbara, CA (June 21-23, 1993)] 51st Annual Device Research Conference - Pseudomorphic SCH blue-green diode lasers

Grillo, D.C., Fan, Y., Ringle, M.D., Han, J., He, L., Gunshor, R.L., Jeon, H., Salokatve, A., Hagerott, M., Nurmikko, A.V., Hua, G.C., Otsuka, N., Oh, E., Ramdas, A.K.

Year:

1993

Language:

english

File:

PDF, 102 KB

english, 1993

8

Mode-induced transverse photodarkening loss variations in large-mode-area ytterbium doped silica fibers

Söderlund, Mikko J., Montiel i Ponsoda, Joan J., Tammela, Simo K. T., Ylä-Jarkko, Kalle, Salokatve, Arto, Honkanen, Seppo

Journal:

Year:

2008

Language:

english

File:

PDF, 480 KB

english, 2008

9

The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy

Salokatve, A., Hovinen, M.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 656 KB

english, 1990

10

All solid source molecular beam epitaxy growth of strained-layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

Toivonen, Mika, Jalonen, Marko, Salokatve, Arto, Näppi, Jari, Savolainen, Pekka, Pessa, Markus, Asonen, Harry

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 310 KB

english, 1995

11

Continuous-wave, room temperature, ridge waveguide green-blue diode laser

Salokatve, A., Jeon, H., Ding, J., Hovinen, M., Nurmikko, A.V., Grillo, D.C., Li He,, Han, J., Fan, Y., Ringle, M., Gunshor, R.L., Hua, G.C., Otsuka, N.

Journal:

Electronics Letters

Year:

1993

Language:

english

File:

PDF, 523 KB

english, 1993

12

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy

Salokatve, A., Toivonen, M., Asonen, H., Pessa, M., Likonen, J.

Year:

1996

Language:

english

File:

PDF, 337 KB

english, 1996

13

The growth mode of Cu overlayers on Pd(100)

H. Asonen, C. Barnes, A. Salokatve, A. Vuoristo

Journal:

Applications of Surface Science

Year:

1985

Language:

english

File:

PDF, 695 KB

english, 1985

14

On degradation of ZnSe-based blue-green diode lasers

Hovinen, M., Ding, J., Salokatve, A., Nurmikko, A. V., Hua, G. C., Grillo, D. C., He, Li, Han, J., Ringle, M., Gunshor, R. L.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 709 KB

english, 1995

15

Identification Of The Native Vacancy Defects In ZnSxSe1−x And MgyZn1−y SxSe1−x by Positron Annihilation

Saarinen, K., Laine, T., Skog, K., Oila, J., Hautojärvi, P., Rakennus, K., Uusimaa, P., Salokatve, A., Pessa, M.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 468 KB

english, 1996

16

SPIE Proceedings [SPIE Optoelectronics and High-Power Lasers & Applications - San Jose, CA (Saturday 24 January 1998)] Physics and Simulation of Optoelectronic Devices VI - ZnSe-based light emitters grown on wide-gap III-V buffer layers

Uusimaa, Petteri, Salokatve, Arto K., Savolainen, Pekka, Rinta-Moykky, A., Pessa, Markus, Souifi, A., Adhiri, R., Kiriakidis, George, Moschovis, K., Stoimenos, J., Osinski, Marek, Blood, Peter, Ishiba

Year:

1998

Language:

english

File:

PDF, 1.81 MB

english, 1998

17

Pseudomorphic SCH blue-green diode lasers

Grillo, D.C., Fan, Y., Ringle, M.D., Han, J., He, L., Gunshor, R.L., Jeon, H., Salokatve, A., Hagerott, M., Nurmikko, A.V., Hua, G.C., Otsuka, N., Oh, E., Ramdas, A.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 140 KB

english, 1993

18

AlGaAs/GaAs Heterojunction Photodiodes Grown by MBE

Riesz, Ferenc, Szentpáli, B., Mojzes, I., Salokatve, A., Asonen, H., Pessa, M.

Journal:

Materials Science Forum

Year:

1991

File:

PDF, 235 KB

1991

19

SPIE Proceedings [SPIE Symposium on Integrated Optoelectronics - San Jose, CA (Thursday 20 January 2000)] In-Plane Semiconductor Lasers IV - High-power highly reliable Al-free active region laser diodes in the 785- to 830-nm region

Nightingale, John L., Finander, Michael J., Nabiev, Rashit F., Kuuslahti, Tiina E., Koengaes, Jukka, Salokatve, Arto K., Mawst, Luke J., Martinelli, Ramon U.

Year:

2000

Language:

english

File:

PDF, 320 KB

english, 2000

20

All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser

Toivonen, M., Näppi, J., Salokatve, A., Pessa, M., Jalonen, M., Asonen, H., Murison, R.

Journal:

Electronics Letters

Year:

1995

Language:

english

File:

PDF, 321 KB

english, 1995

21

Growth mode and electronic structure of copper films on aluminium substrates

C.J. Barnes, H. Asonen, A. Salokatve, M. Pessa

Journal:

Surface Science

Year:

1987

Language:

english

File:

PDF, 1003 KB

english, 1987

22

Multiplication noise in GaAs/AlGaAs multiquantum well avalanche photodiodes with different well widths

Salokatve, A., Toivonen, M., Hovinen, M.

Journal:

Electronics Letters

Year:

1992

Language:

english

File:

PDF, 317 KB

english, 1992

23

The effect of interdiffusion on the growth mode of copper on Al{111}

H. Asonen, C.J. Barnes, A. Salokatve, M. Pessa

Journal:

Surface Science

Year:

1985

Language:

english

File:

PDF, 466 KB

english, 1985

24

[IEEE Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6 - San Francisco, CA, USA (1998.5.3-1998.5.8)] Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178) - High-power 650-nm laser diodes grown by solid-source molecular beam epitaxy

Toivonen, M., Savolainen, P., Jalonen, M., Salokatve, A., Dumitrescu, M., Pessa, M., Corvini, P.J., Fang, F., Jansen, M., Nabiev, R.F.

Year:

1998

Language:

english

File:

PDF, 147 KB

english, 1998

25

Molecular beam epitaxial growth and characterization of II–VI blue-green laser diodes having continuous-wave operation at room temperature

M.D. Ringle, D.C. Grillo, Y. Fan, L. He, J. Han, R.L. Gunshor, A. Salokatve, H. Jeon, M. Hovinen, A.V. Nurmikko, G.C. Hua, N. Otsuka

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 309 KB

english, 1994

26

Comparative study of the substrate-film interfaces of GaAs grown by two molecular beam epitaxial methods

Tappura, K., Salokatve, A., Rakennus, K., Asonen, H., Pessa, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 509 KB

english, 1990

27

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - High characteristics temperature of strain-compensated 1.3 μm InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy

Savolainen, P., Toivonen, M., Salokatve, A., Asonen, H., Murison, R.

Year:

1996

Language:

english

File:

PDF, 232 KB

english, 1996

28

[OSA Advanced Semiconductor Lasers and Their Applications - Santa Barbara, California (1999..-..)] Advanced Semiconductor Lasers and Their Applications - Performance and reliability of high-power 670-690 nm CW laser diode bars grown by solid source molecular beam epitaxy

Corvini, P.J., Bournes, P.A., Fang, F., Finander, M., Jansen, M., Nabiev, R.F., Widman, M., Orsila, S., Saarinen, M., Salokatve, A., Savolainen, P., Toivonen, M., Uusimaa, P.

Year:

1999

Language:

english

File:

PDF, 624 KB

english, 1999

29

Photoemission from a metallic superlattice

A. Salokatve, H. Asonen, R. Pankaluoto, R.S. Rao, M. Pessa

Journal:

Superlattices and Microstructures

Year:

1986

Language:

english

File:

PDF, 379 KB

english, 1986

30

Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence

Pastrňák, J., Bosacchi, A., Salokatve, A., Varrio, J., Láznicka, M.

Journal:

Materials Science Forum

Year:

1991

File:

PDF, 311 KB

1991

31

The substrate—epitaxial interface of GaAs and InP grown by GSMBE

K. Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 113 KB

english, 1991

32

[IEEE Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) - Davos, Switzerland (16-20 May 1999)] Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) - Solid source molecular beam epitaxy growth of low threshold and high temperature 1.3 μm AlGaInAs-AlInAs-InP laser diodes suitable for uncooled application

Savolainen, P., Toivonen, M., Melanen, P., Vilokkinen, V., Saarinen, M., Orsila, S., Kuuslahti, T., Salokatve, A., Asonen, H., Panarello, T., Murisonib, R., Pessa, M.

Year:

1999

Language:

english

File:

PDF, 395 KB

english, 1999

33

[IEEE Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 - San Francisco, CA, USA (2000.5.7-2000.5.12)] Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088) - Aluminum-free active region high-power laser diodes

Salokatve, A., Nightingale, J.L.

Year:

2000

Language:

english

File:

PDF, 204 KB

english, 2000

34

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

G. Kiriakidis, K. Moschovis, P. Uusimaa, A. Salokatve, M. Pessa, J. Stoemenos

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 1.54 MB

english, 2000

35

Blue–green microcavity light emitting diode with monolithic MgZnSSe/ZnSSe Bragg reflectors

P Uusimaa, A Salokatve, K Rakennus, A Rinta-Möykky, M Pessa

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 201 KB

english, 1998

36

by Positron Annihilation

Saarinen, K., Laine, T., Skog, K., Mäkinen, J., Hautojärvi, P., Rakennus, K., Uusimaa, P., Salokatve, A., Pessa, M.

Journal:

Physical Review Letters

Year:

1996

Language:

english

File:

PDF, 122 KB

english, 1996

37

Study of ZnSe-Based Layer Structures for Blue-Green Laser Diodes

M. Pessa, K. Rakennus, P. Uusimaa, P. Savolainen, A. Salokatve

Journal:

physica status solidi (b)

Year:

1995

Language:

english

File:

PDF, 568 KB

english, 1995

38

Properties of strained In0.2Ga0.8As/GaAs superlattices with various barrier thicknesses

Hovinen, M., Salokatve, A., Asonen, H.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 573 KB

english, 1991

39

Band offsets at the GaInP/GaAs heterojunction

Lindell, A., Pessa, M., Salokatve, A., Bernardini, F., Nieminen, R. M., Paalanen, M.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 404 KB

english, 1997

40

Pseudomorphic separate confinement heterostructure blue-green diode lasers

Grillo, D. C., Fan, Y., Han, J., He, L., Gunshor, R. L., Salokatve, A., Hagerott, M., Jeon, H., Nurmikko, A. V., Hua, G. C., Otsuka, N.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 636 KB

english, 1993

41

SPIE Proceedings [SPIE Photonics for Industrial Applications - Boston, MA (Monday 31 October 1994)] II-VI Blue/Green Laser Diodes - Physics of gain and stimulated emission in II-VI diode lasers

Ding, J., Kozlov, Vladimir G., Kelkar, P., Salokatve, A., Nurmikko, Arto V., Han, Jung, Grillo, Donald C., Ringle, Mike D., Gunshor, Robert L., Gunshor, Robert L., Nurmikko, Arto V.

Year:

1994

Language:

english

File:

PDF, 515 KB

english, 1994

42

Oxide-confined resonant cavity red light-emitting diode grown by solid source molecular beam epitaxy

Jalonen, M., Toivonen, M., Köngäs, J., Salokatve, A., Pessa, M.

Journal:

Electronics Letters

Year:

1997

Language:

english

File:

PDF, 295 KB

english, 1997

43

The development of low voltage room temperature continuous wave laser diodes

R.L. Gunshor, J. Han, A.V. Nurmikko, A. Salokatve

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 630 KB

english, 1995

44

Epitaxial lift‐off of ZnSe based II–VI structures

Brys, C., Vermaerke, F., Demeester, P., Van Daele, P., Rakennus, K., Salokatve, A., Uusimaa, P., Pessa, M., Bradley, A. L., Doran, J. P., OGorman, J., Hegarty, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 489 KB

english, 1995

45

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Solid source MBE for phosphide-based devices

Toivonen, M., Salokatve, A., Tappura, K., Jalonen, M., Savolainen, P., Nappi, J., Pessa, M., Asonen, H.

Year:

1996

Language:

english

File:

PDF, 398 KB

english, 1996

46

GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer

Toivonen, M., Salokatve, A., Hovinen, M., Pessa, M.

Journal:

Electronics Letters

Year:

1992

Language:

english

File:

PDF, 320 KB

english, 1992

47

Reduction of surface defects in GaAs grown by molecular beam epitaxy

Salokatve, A., Varrio, J., Lammasniemi, J., Asonen, H., Pessa, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 590 KB

english, 1987

48

Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector

Salokatve, A., Rakennus, K., Uusimaa, P., Pessa, M., Aherne, T., Doran, J. P., O’Gorman, J., Hegarty, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 340 KB

english, 1995

49

[IEEE Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting - Orlando, FL, USA (1-4 Dec. 1998)] Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243) - Uncooled operation of 1.3 μm AlGaInAs/AlInAs/InP laser diodes grown by solid source molecular beam epitaxy

Savolainen, P., Toivonen, M., Orsila, S., Pessa, M., Salokatve, A., Asonen, H., Panarello, T., Murison, R.

Year:

1998

Language:

english

File:

PDF, 140 KB

english, 1998

50

Study of ohmic multilayer metal contacts to p-type ZnSe

Rinta-Möykky, A., Uusimaa, P., Suhonen, S., Valden, M., Salokatve, A., Pessa, M., Likonen, J.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

1999

Language:

english

File:

PDF, 427 KB

english, 1999

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